Modeling the temperature-dependent early voltage of a silicon germanium heterojunction bipolar transistor

被引：1

作者：

Wartenberg, SA ^{[1
]}

Westgate, CR ^{[1
]}

机构：

[1] Johns Hopkins Univ, Dept Elect & Comp Engn, Baltimore, MD 21218 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1999年 / 46卷 / 06期

关键词：

device characterization; device modeling; early voltage; heterojunction bipolar transistor; isothermal; pulsed; silicon germanium;

D O I：

10.1109/16.766886

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper compares the temperature-dependent Early voltage of a silicon germanium heterojunction bipolar transistor (HBT) to that of a silicon bipolar junction transistor (BJT) fabricated with identical geometry. Derived is an isothermal expression for the forward Early voltage specifically suited to the base composition of a SiGe HBT, The expression includes two fit factors, one for the Si1-xGex alloy and the other for the nonuniform doping density. The fit factors are functions of the device temperature and are determined through pulsed bias measurements.

引用

页码：1207 / 1211

页数：5

共 10 条

[1] BANDGAP AND TRANSPORT-PROPERTIES OF SI1-XGEX BY ANALYSIS OF NEARLY IDEAL SI/SI1-XGEX/SI HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

KING, CA ;

HOYT, JL ;

GIBBONS, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (10) :2093-2104

[2] EARLY VOLTAGE IN HETEROJUNCTION BIPOLAR-TRANSISTORS - QUANTUM TUNNELING AND BASE RECOMBINATION EFFECTS [J].

KROWNE, CM ;

IKOSSIANASTASIOU, K ;

KOUGIANOS, E .

SOLID-STATE ELECTRONICS, 1995, 38 (12) :1979-1991

[3] A STUDY OF BASE BUILT-IN FIELD EFFECTS ON THE STEADY-STATE CURRENT GAIN OF HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

LIOU, JJ ;

WONG, WW ;

YUAN, JS .

SOLID-STATE ELECTRONICS, 1990, 33 (07) :845-849

[4] EARLY VOLTAGE IN VERY-NARROW-BASE BIPOLAR-TRANSISTORS - COMMENTS [J].

LIOU, JJ .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (05) :236-236

[5]

Potyraj PA, 1996, IEEE MTT-S, P673, DOI 10.1109/MWSYM.1996.511029

[6] EARLY VOLTAGE IN VERY-NARROW-BASE BIPOLAR-TRANSISTORS [J].

ROULSTON, DJ .

IEEE ELECTRON DEVICE LETTERS, 1990, 11 (02) :88-89

[7]

ROUSTON DJ, 1975, SOLID STATE ELECT, V18, P845

[8]

SZE SM, 1981, PHYSICS SEMICONDUCTO

[9]

Wartenberg CA, 1998, MICROW OPT TECHN LET, V18, P258, DOI 10.1002/(SICI)1098-2760(199807)18:4<258::AID-MOP6>3.0.CO

[10]

2-D

← 1 →