INFLUENCE OF LASER RADIATION ON THE PROPERTIES OF P- AND N-TYPE SILICON

被引：0

作者：

Mozolevskis, G. ^{[1
]}

Medvid, A. ^{[1
]}

Onufrijevs, P. ^{[1
]}

Dmytruk, I.

Pundyk, I.

机构：

[1] Riga Tech Univ, Labs Semicond Phys, Riga, Latvia

来源：

RADIATION INTERACTION WITH MATERIAL AND ITS USE IN TECHNOLOGIES 2012 | 2012年

关键词：

Photoluminescence; nanocones; p-n junction; silicon; laser; SEMICONDUCTOR;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper we show two-stage process of nanocones formation by Nd:YAG laser radiation. It was deomstrated that in first stage after irradiation by laser p-n junction is formed. Kelvin probe force microscopy was used to measure surface potential of p-n junction after irradiation by laser. In second stage nanocones are formed. Photoluminescence spectroscopy was used to measure luminescence and its intensity dependance on intensity of laser radiation.

引用

页码：497 / 501

页数：5

共 7 条

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