INFLUENCE OF LASER RADIATION ON THE PROPERTIES OF P- AND N-TYPE SILICON

被引：0
|
作者：
Mozolevskis, G. [1 ]
Medvid, A. [1 ]
Onufrijevs, P. [1 ]
Dmytruk, I.
Pundyk, I.
机构：
[1] Riga Tech Univ, Labs Semicond Phys, Riga, Latvia
来源：
RADIATION INTERACTION WITH MATERIAL AND ITS USE IN TECHNOLOGIES 2012 | 2012年
关键词：
Photoluminescence; nanocones; p-n junction; silicon; laser; SEMICONDUCTOR;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
In this paper we show two-stage process of nanocones formation by Nd:YAG laser radiation. It was deomstrated that in first stage after irradiation by laser p-n junction is formed. Kelvin probe force microscopy was used to measure surface potential of p-n junction after irradiation by laser. In second stage nanocones are formed. Photoluminescence spectroscopy was used to measure luminescence and its intensity dependance on intensity of laser radiation.
引用
收藏
页码：497 / 501
页数：5
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