Electron and hole spins in InP/(Ga,In)P self-assembled quantum dots

被引：10

作者：

Syperek, M. ^{[1
,2
]}

Yakovlev, D. R. ^{[1
,3
]}

Yugova, I. A. ^{[1
,4
]}

Misiewicz, J. ^{[2
]}

Jetter, M. ^{[5
]}

Schulz, M. ^{[5
]}

Michler, P. ^{[5
]}

Bayer, M. ^{[1
]}

机构：

[1] Tech Univ Dortmund, D-44221 Dortmund, Germany

[2] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[3] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[4] St Petersburg State Univ, Dept Solid State Phys, Fac Phys, St Petersburg 198504, Russia

[5] Univ Stuttgart, Inst Halbleiteropt & Funkt Grenzflachen, D-70569 Stuttgart, Germany

来源：

PHYSICAL REVIEW B | 2012年 / 86卷 / 12期

关键词：

MAGNETIC-FIELDS; INP; SEMICONDUCTORS; RELAXATION; DYNAMICS; EXCITONS; CARRIERS; WELLS; GAAS;

D O I：

10.1103/PhysRevB.86.125320

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The properties of electron and hole spins in InP/(Ga,In)P self-assembled quantum dots are studied through their coherent dynamics using time-resolved Kerr rotation. From these studies information about the g factor and dephasing of the spin excitations is extracted. The electron spin shows a behavior similar to that of electron spins in quantum dots of different material: The g factor is isotropic in the dot plane and with increasing applied magnetic field the spin dephasing accelerates due to variations in the dot ensemble. On the other hand, the hole spin demonstrates a behavior different from other dot systems. Namely, the signal decay on a time scale of about 100 ps does not depend on magnetic field, and the g factor is isotropic in the dot plane. These findings underline previous suggestions that only the electrons are well localized in the InP/(Ga,In)P quantum dots, while the holes are weakly confined and carry bulklike character.

引用

页数：6

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