Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors

被引：57

作者：

Medjdoub, Farid ^{[1
]}

Zegaoui, Malek ^{[1
]}

Grimbert, Bertrand ^{[1
]}

Rolland, Nathalie ^{[1
]}

Rolland, Paul-Alain ^{[1
]}

机构：

[1] Inst Elect Microelect & Nanotechnol, F-59650 Villeneuve Dascq, France

来源：

APPLIED PHYSICS EXPRESS | 2011年 / 4卷 / 12期

关键词：

DOUBLE-HETEROSTRUCTURE;

D O I：

10.1143/APEX.4.124101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, the effects of an AlGaN back barrier in the dc and RF performances of AlN/GaN high-electron-mobility transistors (HEMTs) grown on 100 mm Si substrates have been investigated. It is shown that the outstanding dc performance in highly scaled AlN/GaN-on-Si HEMTs can be fully preserved when introducing an AlGaN back barrier while significantly reducing the sub-threshold drain leakage current and enhancing the RF performance by the reduction of short-channel effects. Therefore, the AlN/GaN/AlGaN double heterostructure enables high-aspect-ratio devices generating extremely high current density, low leakage current, and high voltage operation. (C) 2011 The Japan Society of Applied Physics

引用

页数：3

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