Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator

被引：3229

作者：

Chang, Cui-Zu ^{[1
,2
]}

Zhang, Jinsong ^{[1
]}

Feng, Xiao ^{[1
,2
]}

Shen, Jie ^{[2
]}

Zhang, Zuocheng ^{[1
]}

Guo, Minghua ^{[1
]}

Li, Kang ^{[2
]}

Ou, Yunbo ^{[2
]}

Wei, Pang ^{[2
]}

Wang, Li-Li ^{[2
]}

Ji, Zhong-Qing ^{[2
]}

Feng, Yang ^{[1
]}

Ji, Shuaihua ^{[1
]}

Chen, Xi ^{[1
]}

Jia, Jinfeng ^{[1
]}

Dai, Xi ^{[2
]}

Fang, Zhong ^{[2
]}

Zhang, Shou-Cheng ^{[3
]}

He, Ke ^{[2
]}

Wang, Yayu ^{[1
]}

Lu, Li ^{[2
]}

Ma, Xu-Cun ^{[2
]}

Xue, Qi-Kun ^{[1
]}

机构：

[1] Tsinghua Univ, State Key Lab Low Dimens Quantum Phys, Dept Phys, Beijing 100084, Peoples R China

[2] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

[3] Stanford Univ, Dept Phys, Stanford, CA 94305 USA

来源：

SCIENCE | 2013年 / 340卷 / 6129期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1126/science.1234414

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The quantized version of the anomalous Hall effect has been predicted to occur in magnetic topological insulators, but the experimental realization has been challenging. Here, we report the observation of the quantum anomalous Hall (QAH) effect in thin films of chromium-doped (Bi,Sb)(2)Te-3, a magnetic topological insulator. At zero magnetic field, the gate-tuned anomalous Hall resistance reaches the predicted quantized value of h/e(2), accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect may lead to the development of low-power-consumption electronics.

引用

页码：167 / 170

页数：4

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