Effect of thermal annealing on luminescence properties of Eu,Mg-codoped GaN grown by organometallic vapor phase epitaxy

被引：15

作者：

Lee, Dong-gun ^{[1
]}

Wakamatsu, Ryuta ^{[1
]}

Koizumi, Atsushi ^{[1
]}

Terai, Yoshikazu ^{[1
]}

Poplawsky, Jonathan D. ^{[2
]}

Dierolf, Volkmar ^{[2
]}

Fujiwara, Yasufumi ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Div Mat & Mfg Sci, Suita, Osaka 5650871, Japan

[2] Lehigh Univ, Dept Phys, Bethlehem, PA 18015 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 14期

基金：

日本学术振兴会; 美国国家科学基金会;

关键词：

LIGHT-EMITTING-DIODES; MECHANISM; GAINN;

D O I：

10.1063/1.4800447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of thermal annealing on Eu,Mg-codoped GaN (GaN:Eu,Mg) grown by organometallic vapor phase epitaxy were investigated. After annealing in nitrogen ambient, Eu-Mg related photoluminescence emission was quenched to 13% without a change in the spectral shape. The quenched emission recovered to 65% of the original intensity after a subsequent annealing in ammonia ambient. Combined excitation emission spectroscopy and time-resolved photoluminescence results revealed that the quenching behavior is attributed to a nonradiative process induced by unpassivated Mg acceptors in the relaxation of excited 4f electrons of Eu ions. (C) 2013 American Institute of Physics.

引用

页数：4

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