Cu2SnS3 as a Potential Absorber for Thin Film Solar Cells

被引：18

作者：

Tiwari, Devendra ^{[1
]}

Chaudhuri, T. K. ^{[1
]}

Shripathi, T. ^{[2
]}

Deshpande, U. ^{[2
]}

机构：

[1] Charotar Univ Sci & Technol, Dr KC Patel Res & Dev Ctr, Changa 388421, Gujarat, India

[2] UGC DAE, Consortium Sci Res, Indore 452001, Madhya Pradesh, India

来源：

SOLID STATE PHYSICS, PTS 1 AND 2 | 2012年 / 1447卷

关键词：

Cu2SnS3; X-ray diffraction; Semiconductor; Electrical measurements; Solar cells;

D O I：

10.1063/1.4710361

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The properties of pure Cu2SnS3 thin films synthesized by direct liquid coating method have been studied for application in TFSCs. The films have band gap of 1.12 eV and an absorption coefficient of similar to 10(5) cm(-1). They are p-type with electrical conductivity of 0.5 S/cm and show photoconductivity. TFSCs made of these p-CTS films and n-CdS have been analyzed. The maximum efficiency of CTS solar cells is 33 % with V-OC and I-SC of 0.75 V and 40 mA/cm(2).

引用

页码：1039 / +

页数：2