Sintering Behavior and Microwave Dielectric Properties of Low-Permittivity SrMgSi2O6Ceramic

被引:22
|
作者
Zhou, Xianjie [1 ]
Zhou, Huanfu [1 ]
Hu, Sang [1 ]
Luan, Xiaowen [1 ]
Deng, Jiji [1 ]
Lu, Chengming [1 ]
Li, Shixuan [1 ]
Wang, Kuangguo [1 ]
Chen, Xiuli [1 ]
机构
[1] Guilin Univ Technol, Guangxi Key Lab Collaborat Innovat Ctr Explorat H, Sch Mat Sci & Engn, Guangxi Minist Prov Jointly Constructed Cultivat, Guilin 541004, Peoples R China
关键词
Low permittivity; SrMgSi2O6; microwave dielectric properties; CRYSTAL-STRUCTURE; CERAMICS; TEMPERATURE; ZN; MG; MICROSTRUCTURE; SUBSTITUTION;
D O I
10.1007/s11664-020-08327-z
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Low-permittivity SrMgSi(2)O(6)microwave dielectric ceramics were synthesized via a conventional solid-state reaction method. Further, their sintering behavior as well as structural and microwave dielectric properties were studied. The x-ray diffraction patterns of the SrMgSi(2)O(6)and Sr(2)MgSi(2)O(7)ceramics were compared; both the samples were confirmed to be tetragonal. Meanwhile, the microwave dielectric properties of the samples were related to their microscopic morphology. In addition, the SrMgSi(2)O(6)ceramics had a low sintering temperature of 1125 degrees C; they exhibited good microwave dielectric performances with a relative permittivity of epsilon(r) = 6.7, a quality factorQ x f = 25,800 GHz, and temperature coefficient of the resonator frequency tau(f) = -46 ppm/degrees C. Therefore, the ceramics exhibit potential for application in microwave devices.
引用
收藏
页码:5989 / 5993
页数:5
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