Latent ion tracks in amorphous silicon

被引：26

作者：

Bierschenk, T. ^{[1
]}

Giulian, R. ^{[1
]}

Afra, B. ^{[1
]}

Rodriguez, M. D. ^{[1
]}

Schauries, D. ^{[1
]}

Mudie, S. ^{[2
]}

Pakarinen, O. H. ^{[3
,4
,5
]}

Djurabekova, F. ^{[4
,5
]}

Nordlund, K. ^{[4
,5
]}

Osmani, O. ^{[6
,7
,8
]}

Medvedev, N. ^{[9
]}

Rethfeld, B. ^{[7
,8
]}

Ridgway, M. C. ^{[1
]}

Kluth, P. ^{[1
]}

机构：

[1] Australian Natl Univ, Res Sch Phys & Engn, Canberra, ACT 0200, Australia

[2] Australian Synchrotron, Clayton, Vic 3168, Australia

[3] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

[4] Univ Helsinki, Helsinki Inst Phys, FIN-00014 Helsinki, Finland

[5] Univ Helsinki, Dept Phys, FIN-00014 Helsinki, Finland

[6] Univ Duisburg Essen, Fak Phys, D-47057 Duisburg, Germany

[7] Tech Univ Kaiserslautern, Dept Phys, D-67653 Kaiserslautern, Germany

[8] Tech Univ Kaiserslautern, OPTIMAS Res Ctr, D-67653 Kaiserslautern, Germany

[9] DESY, Ctr Free Electron Laser Sci, D-22607 Hamburg, Germany

来源：

PHYSICAL REVIEW B | 2013年 / 88卷 / 17期

关键词：

PHASE-TRANSITION; HEAVY-IONS; SEMICONDUCTORS; IRRADIATION; FULLERENES; DYNAMICS; DENSITY; SOLIDS; METALS; GLASS;

D O I：

10.1103/PhysRevB.88.174111

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present experimental evidence for the formation of ion tracks in amorphous Si induced by swift heavy-ion irradiation. An underlying core-shell structure consistent with remnants of a high-density liquid structure was revealed by small-angle x-ray scattering and molecular dynamics simulations. Ion track dimensions differ for as-implanted and relaxed Si as attributed to different microstructures and melting temperatures. The identification and characterization of ion tracks in amorphous Si yields new insight into mechanisms of damage formation due to swift heavy-ion irradiation in amorphous semiconductors.

引用

页数：5

共 31 条

[1] SAXS study of ion tracks in San Carlos olivine and Durango apatite
Afra, B.
Rodriguez, M. D.
Lang, M.
Ewing, R. C.
Kirby, N.
Trautmann, C.
Kluth, P.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 286 : 243 - 246
[2] MOLECULAR-DYNAMICS WITH COUPLING TO AN EXTERNAL BATH
BERENDSEN, HJC
POSTMA, JPM
VANGUNSTEREN, WF
DINOLA, A
HAAK, JR
[J]. JOURNAL OF CHEMICAL PHYSICS, 1984, 81 (08) : 3684 - 3690
[3] The liquid-liquid phase transition in silicon revealed by snapshots of valence electrons
Beye, Martin
Sorgenfrei, Florian
Schlotter, William F.
Wurth, Wilfried
Foehlisch, Alexander
[J]. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2010, 107 (39) : 16772 - 16776
[4] Latent tracks formation in silicon single crystals irradiated with fullerenes in the electronic regime
Canut, B
Bonardi, N
Ramos, SMM
Della-Negra, S
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 146 (1-4) : 296 - 301
[5] Behavior of crystalline silicon under huge electronic excitations: A transient thermal spike description
Chettah, A.
Kucal, H.
Wang, Z. G.
Kac, M.
Meftah, A.
Toulemonde, M.
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2009, 267 (16) : 2719 - 2724
[6] DENSITY OF AMORPHOUS SI
CUSTER, JS
THOMPSON, MO
JACOBSON, DC
POATE, JM
ROORDA, S
SINKE, WC
SPAEPEN, F
[J]. APPLIED PHYSICS LETTERS, 1994, 64 (04) : 437 - 439
[7] Latent track formation in silicon irradiated by 30 MeV fullerenes
Dunlop, A
Jaskierowicz, G
Della-Negra, S
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 146 (1-4) : 302 - 308
[8] Tracks of high energy heavy ions in solids
Furuno, S
Otsu, H
Hojou, K
Izui, K
[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 107 (1-4) : 223 - 226
[9] Void formation in amorphous germanium due to high electronic energy deposition
Gaertner, K.
Joehrens, J.
Steinbach, T.
Schnohr, C. S.
Ridgway, M. C.
Wesch, W.
[J]. PHYSICAL REVIEW B, 2011, 83 (22):
[10] MELTING TEMPERATURE OF UNRELAXED AMORPHOUS-SILICON
GRIMALDI, MG
BAERI, P
MALVEZZI, MA
[J]. PHYSICAL REVIEW B, 1991, 44 (04): : 1546 - 1553

← 1 2 3 4 →