Synchrotron X-ray topography analysis of local damage occurring during polishing of 4H-SiC wafers

被引：10

作者：

Sasaki, Masayuki ^{[1
]}

Matsuhata, Hirofumi ^{[1
,2
]}

Tamura, Kentaro ^{[1
]}

Sako, Hideki ^{[1
]}

Kojima, Kazutoshi ^{[1
,2
]}

Yamaguchi, Hirotaka ^{[1
,2
]}

Kitabatake, Makoto ^{[1
]}

机构：

[1] R&D Partnership Future Power Elect Technol FUPET, Tsukuba, Ibaraki 3050053, Japan

[2] Natl Inst Adv Ind Sci & Technol, Adv Power Elect Res Ctr, Tsukuba, Ibaraki 3058568, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 09期

关键词：

SURFACE PREPARATION; EPITAXIAL-GROWTH; DISLOCATIONS; SUBSTRATE; LAYER; SIMULATION; DEFECTS;

D O I：

10.7567/JJAP.54.091301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface defects with a scratch-like appearance are often observed locally on 4H-SiC wafers after epitaxial film (epi-film) growth. Since optical microscopy has only revealed a very flat surface after chemo-mechanical polishing (CMP) and before epi-film growth, the origins of these scratch-like surface defects have remained unknown. Therefore, we investigated the generation mechanism of such surface defects by synchrotron Berg-Barrett X-ray topography. Although only highly flat surfaces are observed by optical microscopy, we found that damaged regions comprising lattice defects are often introduced locally during polishing in the subsurface region. These lattice defects are almost completely removed by hydrogen etching, a pre-process for epi-film growth; however, surface defects associated with step bunching are formed in such damaged areas of the wafer surface. It is clear that local surface defects develop into surface defects with a scratch-like appearance during epi-film growth. (C) 2015 The Japan Society of Applied Physics

引用

页数：7

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JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (07)

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