Negative-U System of Carbon Vacancy in 4H-SiC

被引：231

作者：

Son, N. T. ^{[1
]}

Trinh, X. T. ^{[1
]}

Lovlie, L. S. ^{[2
]}

Svensson, B. G. ^{[2
]}

Kawahara, K. ^{[3
]}

Suda, J. ^{[3
]}

Kimoto, T. ^{[3
]}

Umeda, T. ^{[4
]}

Isoya, J. ^{[5
]}

Makino, T. ^{[6
]}

Ohshima, T. ^{[6
]}

Janzen, E. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden

[2] Univ Oslo, Ctr Mat Sci & Nanotechnol, Dept Phys, N-0316 Oslo, Norway

[3] Kyoto Univ, Dept Elect Sci Engn, Nishikyo Ku, Kyoto 6158510, Japan

[4] Univ Tsukuba, Grad Sch Pure & Appl Sci, Inst Appl Phys, Tsukuba, Ibaraki 3058573, Japan

[5] Univ Tsukuba, Grad Sch Lib Informat & Media Studies, Tsukuba, Ibaraki 3058550, Japan

[6] Japan Atom Energy Agcy, Takasaki, Gunma 3701292, Japan

来源：

PHYSICAL REVIEW LETTERS | 2012年 / 109卷 / 18期

基金：

瑞典研究理事会;

关键词：

DEEP-LEVEL DEFECTS; ELECTRONIC-STRUCTURE; EPITAXIAL LAYERS; SILICON-CARBIDE; SEMICONDUCTORS; CENTERS;

D O I：

10.1103/PhysRevLett.109.187603

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using electron paramagnetic resonance (EPR), energy levels of the carbon vacancy (V-C) in 4H-SiC and its negative-U properties have been determined. Combining EPR and deep-level transient spectroscopy we show that the two most common defects in as-grown 4H-SiC-the Z(1/2) lifetime-limiting defect and the EH7 deep defect-are related to the double acceptor (2 - vertical bar 0) and single donor (0 vertical bar +) levels of V-C, respectively.

引用

页数：5

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