Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention

被引：139

作者：

Xu, N. ^{[1
]}

Liu, L. F. ^{[1
]}

Sun, X. ^{[1
]}

Chen, C. ^{[1
]}

Wang, Y. ^{[1
]}

Han, D. D. ^{[1
]}

Liu, X. Y. ^{[1
]}

Han, R. Q. ^{[1
]}

Kang, J. F. ^{[1
]}

Yu, B. ^{[2
]}

机构：

[1] Peking Univ, Inst Microelect, Beijing 100871, Peoples R China

[2] NASA, Ames Res Ctr, Moffett Field, CA 94035 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 07期

关键词：

D O I：

10.1088/0268-1242/23/7/075019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Highly stable bipolar resistive switching behaviors of TiN/ZnO/Pt devices were demonstrated for the first time. The excellent memory characteristics including fast switching speed (< 20 ns for set and < 60 ns for reset), long retention (in the order of 10(5) s) and non-electroforming process were demonstrated. The bipolar switching behaviors can be explained by formation and rupture of the filamentary conductive path consisting of oxygen vacancies. The excellent bipolar switching behavior can be attributed to the significant amount of oxygen vacancies in ZnO film and the effect of TiN layer serving as an oxygen reservoir.

引用

页数：4

共 16 条

[1] Electroluminescence in SrTiO3:Cr single-crystal nonvolatile memory cells [J].

Alvarado, S. F. ;

La Mattina, F. ;

Bednorz, J. G. .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2007, 89 (01) :85-89

[2]

Baek I. G., 2004, INT EL DEV M, V587

[3]

FANG TN, 2006, INT EL DEV M, V789

[4] TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching [J].

Fujimoto, Masayuki ;

Koyama, Hiroshi ;

Konagai, Masashi ;

Hosoi, Yasunari ;

Ishihara, Kazuya ;

Ohnishi, Shigeo ;

Awaya, Nobuyoshi .

APPLIED PHYSICS LETTERS, 2006, 89 (22)

[5] Electrical conductivity mechanisms in zinc oxide thin films deposited by pulsed laser deposition using different growth environments [J].

Heluani, S. P. ;

Braunstein, G. ;

Villafuerte, M. ;

Simonelli, G. ;

Duhalde, S. .

THIN SOLID FILMS, 2006, 515 (04) :2379-2386

[6]

Hosoi Y., 2006, INT EL DEV M, V793

[7] Electrical-stress-induced conductivity increase in SrTiO3 films [J].

Karg, S. ;

Meijer, G. I. ;

Widmer, D. ;

Bednorz, J. G. .

APPLIED PHYSICS LETTERS, 2006, 89 (07)

[8] Resistance switching of copper doped MoOx films for nonvolatile memory applications [J].

Lee, Dongsoo ;

Seong, Dong-jun ;

Jo, Inhwa ;

Xiang, F. ;

Dong, R. ;

Oh, Seokjoon ;

Hwang, Hyunsang .

APPLIED PHYSICS LETTERS, 2007, 90 (12)

[9] DIFFUSION BARRIER PROPERTIES OF TI/TIN INVESTIGATED BY TRANSMISSION ELECTRON-MICROSCOPY [J].

MANDL, M ;

HOFFMANN, H ;

KUCHER, P .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) :2127-2132

[10] Bipolar and unipolar resistive switching in Cu-doped SiO2 [J].

Schindler, Christina ;

Thermadam, Sarath Chandran Puthen ;

Waser, Rainer ;

Kozicki, Michael N. .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (10) :2762-2768

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