1.47 μm High Characteristic Temperature InGaAsP/InP MQW Laser

被引：0

作者：

Chen, Weibo ^{[1
]}

Li, Lin ^{[1
]}

Zhao, Jinlong ^{[1
]}

Wang, Yong ^{[1
]}

Li, Te ^{[1
]}

Lu, Peng ^{[1
]}

Li, Mei ^{[1
]}

Liu, GuoJun ^{[1
]}

机构：

[1] Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Lasers, Changchun, Peoples R China

来源：

2012 INTERNATIONAL CONFERENCE ON OPTOELECTRONICS AND MICROELECTRONICS (ICOM) | 2012年

关键词：

1.47 mu m; InGaAsP/InP; TI; asymmetric SCH MQW; High Characteristic Temperature; AUGER RECOMBINATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

LASTIP software was applied to simulate symmetric and asymmetric InGaAsP/InP multi-quantum-well (MQW) laser diodes (LDs) emitting at about 1.47 mu m. In order to obtain the laser with high-temperature characteristic, the tunnel layer and inner cladding layer was inserted in the laser structure. By comparing the two structures, we found that the tunnel injection (TI) structure can effectively reduce hot carrier effects, the TI asymmetric SCH MQW lasers have good temperature characteristics and smaller threshold current.

引用

页码：115 / 118

页数：4

共 10 条

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