GaN-On-Diamond HEMT Technology With TAVG=176 °C at PDC, max=56 W/mm Measured by Transient Thermoreflectance Imaging

被引：68

作者：

Tadjer, Marko J. ^{[1
]}

Anderson, Travis J. ^{[1
]}

Ancona, Mario G. ^{[1
]}

Raad, Peter E. ^{[2
,3
]}

Komarov, Pavel ^{[3
]}

Bai, Tingyu ^{[4
]}

Gallagher, James C. ^{[1
]}

Koehler, Andrew D. ^{[1
]}

Goorsky, Mark S. ^{[4
]}

Francis, Daniel A. ^{[5
]}

Hobart, Karl D. ^{[1
]}

Kub, Fritz J. ^{[1
]}

机构：

[1] US Naval Res Lab, Washington, DC 20375 USA

[2] Southern Methodist Univ, Dept Mech Engn, Dallas, TX 75205 USA

[3] TMX Sci Inc, Richardson, TX 75081 USA

[4] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA

[5] Akash Syst Inc, San Francisco, CA 94108 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2019年 / 40卷 / 06期

关键词：

GaN; diamond; thermoreflectance; thermal management; transmission electron microscopy; THERMAL-CONDUCTIVITY; TEMPERATURE; FILMS;

D O I：

10.1109/LED.2019.2909289

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Record DC power has been demonstrated in AlGaN/GaN high electron mobility transistors fabricated using a substrate replacement process in which a thick diamond substrate is grown by chemical vapor deposition following removal of the original Si substrate. Crucial to the process is a similar to 30 nm thick SiN interlayer that has been optimized for thermal resistance. The reductions obtained in self-heating have been quantified by transient thermoreflectance imaging and interpreted using 3D numerical simulation. With a DC power dissipation level of 56 W/mm, the measured average and maximum temperatures in the gate-drain access region were 176 degrees C and 205 degrees C, respectively.

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收藏

页码：881 / 884

页数：4

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