Photo-pseudo-metal-oxide-semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials

被引：6

作者：

Daanoune, M. ^{[1
]}

Diab, A. ^{[1
]}

Sirajeddine, S. ^{[1
]}

Kaminski-Cachopo, A. ^{[1
]}

Ionica, I. ^{[1
]}

Papaioannou, G. ^{[2
]}

Cristoloveanu, S. ^{[1
]}

机构：

[1] Grenoble INP, MINATEC, IMEP LAHC, F-38016 Grenoble, France

[2] Univ Athens, Dept Phys, Athens 15784, Greece

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 18期

关键词：

EXTRACTION; MOSFET; WAFERS;

D O I：

10.1063/1.4804064

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

One of the main issues in the characterization of silicon on insulator (SOI) substrates is to determine the quality of the film-buried oxide interface. This interface quality is strongly connected to the carrier lifetime in the silicon film. In this paper, we extend the well-known pseudo-MOSFET characterization technique for SOI wafers to the extraction of carrier lifetime. The experiment consists in comparing the drain current measured under dark and under laser shining. A model is proposed to evaluate the surface recombination velocity in SOI. Experimental results are validated by numerical simulations. (C) 2013 AIP Publishing LLC.

引用

页数：5

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