High-rate a-Si:H and μc-Si:H film growth studied by advanced plasma and in situ film diagnostics

被引：0
|
作者：
Kessels, WMM [1 ]
van den Oever, PJ [1 ]
Hoefnagels, JPM [1 ]
Hong, J [1 ]
Houston, IJ [1 ]
van de Sanden, MCM [1 ]
机构：
[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
来源：
AMORPHOUS AND HETEROGENEOUS SILICON-BASED FILMS-2002 | 2002年 / 715卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Plasma and in situ film studies have been applied to the expanding thermal plasma to obtain basic insight into the deposition of a-Si:H and muc-Si:H at high rates (> 10 Angstrom/s). A study of the density of plasma radicals (Si, SiH, SiH3) and of the radicals' surface reactivity has revealed that SiH3 is the most important radical for the growth of both materials. In situ attenuated total reflection infrared spectroscopy and spectroscopic ellipsometry have revealed a thick interface layer and consequently long incubation time for the materials deposited at a high deposition rate.
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页码：43 / 48
页数：6
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