Temperature-dependent photoluminescence of quasialigned Al-doped ZnO nanorods

被引：100

作者：

He, H. P. ^{[1
]}

Tang, H. P. ^{[1
]}

Ye, Z. Z. ^{[1
]}

Zhu, L. P. ^{[1
]}

Zhao, B. H. ^{[1
]}

Wang, L. ^{[1
]}

Li, X. H. ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 02期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2429906

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature-dependent photoluminescence (PL) properties of quasialigned Al-doped ZnO nanorods grown by thermal evaporation method were investigated. The ionization energy of the Al donor was determined to be similar to 90 meV. A PL peak at 3.315 eV was observed at low temperature and was tentatively related to excitons bound to surface defects. The emission, along with its first longitudinal optical phonon replica, persists up to room temperature and dominates the near band edge (NBE) emission of the nanorods. The doping of Al results in a redshift of similar to 0.04 eV of the room-temperature NBE emission of the ZnO nanorods. (c) 2007 American Institute of Physics.

引用

页数：3

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