Polytypes and crystallinity of ultrathin epitaxial films of layered materials studied with grazing incidence X-ray diffraction

被引:13
作者
Shimada, T
Nishikawa, H
Koma, A
Furukawa, Y
Arakawa, E
Takeshita, K
Matsushita, T
机构
[1] KOBE STEEL LTD,ELECT RES LAB,KOBE 65122,JAPAN
[2] GRAD UNIV ADV STUDIES,DEPT SYNCHROTRON RADIAT SCI,TSUKUBA,IBARAKI 305,JAPAN
[3] NATL LAB HIGH ENERGY PHYS,PHOTON FACTORY,TSUKUBA,IBARAKI 305,JAPAN
关键词
epitaxy; gallium arsenide; metal-semiconductor non-magnetic thin film structures; niobium selenide; tantalum selenide; X-ray scattering; diffraction and reflection;
D O I
10.1016/S0039-6028(96)00915-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The structure of ultrathin epitaxial films of layered NbSe2 and TaSe2 grown on Se-terminated GaAs((111) over bar) substrates was determined by grazing incidence X-ray diffraction. It was found that the crystallographic polytypes of the films were dependent on the growth temperatures. The temperature range for the growth of octahedrally coordinated TaSe2 was different from that of the bulk. Disappearance of 3R-type portion in NbSe2 at a high growth temperature will be favorable to fabricate superconducting ultrathin epitaxial films.
引用
收藏
页码:379 / 384
页数:6
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