Growth and properties of REBiO3 new buffer materials for coated conductors

被引：5

作者：

Li, G. ^{[1
]}

Pu, M. H. ^{[1
]}

Sun, R. P. ^{[1
]}

Wang, W. T. ^{[1
]}

Zhang, X. ^{[1
]}

Zhang, H. ^{[1
,2
]}

Yang, Y. ^{[1
]}

Zhang, Y. ^{[1
]}

Zhang, H. ^{[1
,2
]}

Cheng, C. H. ^{[1
,3
]}

Zhao, Y. ^{[1
,3
]}

机构：

[1] SW Jiaotong Univ, SRDC, Minist Educ China, Key Lab Adv Technol Mat, Chengdu 610031, Sichuan, Peoples R China

[2] Peking Univ, Dept Phys, Beijing 100871, Peoples R China

[3] Univ New S Wales, Sch Mat Sci & Engn, Sydney, NSW 2052, Australia

来源：

PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2008年 / 468卷 / 15-20期

关键词：

ABO(3)-type; stabilizer; REBiO3; buffer layer;

D O I：

10.1016/j.physc.2008.05.271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new series of ABO(3)-type REBiO3 have been derived from the system Bi2O3-RE2O3, in which cubic RE2O3 stabilize cubic structure of delta-Bi2O3, enabling the formation of REBiO3 at relatively low temperature range. A chemical solution deposition (CSD) route has been used to deposit epitaxial thin films of REBiO3. The crystal lattice, chemical stability, texture development, combined with the successful deposition of high quality superconducting layer demonstrate that the newly developed compounds may play as potential alternatives of buffer layer materials for REBCO-based coated conductors. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1601 / 1605

页数：5