Active frequency-tripler MMICs for 300 GHz signal generation

被引:6
作者
Lewark, Ulrich Johannes [1 ]
Tessmann, Axel [2 ]
Massler, Hermann [2 ]
Wagner, Sandrine [2 ]
Leuther, Arnulf [2 ]
Kallfass, Ingmar [1 ,2 ]
机构
[1] Karlsruhe Inst Technol, Inst Hochfrequenztech & Elekt, D-76131 Karlsruhe, Germany
[2] Fraunhofer Inst Appl Solid State Phys IAF, D-79108 Freiburg, Germany
关键词
Circuit Design and Applications; Modelling; Simulation and characterizations of devices and circuits;
D O I
10.1017/S1759078712000165
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Two frequency-tripler monolithic microwave integrated circuits (MMICs) reaching sub-millimeter-wave output frequencies of 315 GHz are presented. The convenient integration of transistor-based field effect transistor (FET) frequency multipliers into multifunctional MMICs is shown by integration of a single-stage frequency-tripler with a buffer amplifier generating -0.5 dBm of peak output power at 288. Without post-amplification an average output power of -10.1 dBm in the output frequency range from 285 to 315 is measured with 10 dBm of input power. The 3-dB bandwidth is more than 30 GHz and could not be determined exactly due to the measurement setup. Both MMICs are realized in a 50 nm metamorphic high electron mobility transistor (HEMT) transistor technology. A multiple power-meter measurement technique including a waveguide filter is used to measure accurately the second harmonic power content within the output spectrum.
引用
收藏
页码:259 / 266
页数:8
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