Effects of Nitrogen Doping on the Morphology of Basal Plane Dislocations in 4H-SiC Epilayers

被引：10
|
作者：
Zhang, Xuan [1 ]
Nagano, Masahiro [1 ]
Tsuchida, Hidekazu [1 ]
机构：
[1] Cent Res Inst Elect Power Ind CRIEPI, Yokosuka, Kanagawa 2400196, Japan
来源：
SILICON CARBIDE AND RELATED MATERIALS 2011, PTS 1 AND 2 | 2012年 / 717-720卷
关键词：
Basal plane dislocations (BPDs); Nitrogen doping; Stacking faults; Si-core partials; C-core partials; 4H-SiC;
D O I：
10.4028/www.scientific.net/MSF.717-720.335
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Morphologies of BPDs in 4H-SiC epilayers with different nitrogen doping concentrations are explained in detail. While BPDs in low-doped epilayers have the typical morphology of gliding dislocations responding to stress, BPDs in highly doped ([N]>= 1.0x10(18) cm(-3)) epilayers are straight and tilt away from [11-20]. Structures of BPDs were further studied by weak-beam TEM.
引用
收藏
页码：335 / 338
页数：4
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