High Quantum Efficiency Back-Illuminated AlGaN-Based Solar-Blind Ultraviolet p-i-n Photodetectors

被引：20
作者：
Wang Guo-Sheng
Lu Hai [1 ]
Xie Feng
Chen Dun-Jun
Ren Fang-Fang
Zhang Rong
Zheng You-Dou
机构：
[1] Nanjing Univ, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2012年 / 29卷 / 09期
基金：
中国国家自然科学基金;
关键词：
JUNCTION DIODES; DETECTORS; SAPPHIRE;
D O I：
10.1088/0256-307X/29/9/097302
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
AlGaN-based back-illuminated solar-blind ultraviolet (UV) p-i-n photodetectors (PDs) with high quantum efficiency are fabricated on sapphire substrates. To improve the overall performance of the PD, a series of structural design considerations and growth procedures are implemented in the epitaxy process. A distinct wavelength-selective photo-response peak of the PD is obtained in the solar-blind region. When operating in photovoltaic mode, the PD exhibits a solar-blind/UV rejection ratio of up to 4 orders of magnitude and a peak responsivity of similar to 113.5 mA/W at 270 nm, which corresponds to an external quantum efficiency of similar to 52%. Under a reverse bias of -5 V, the PD shows a low dark current of similar to 1.8 pA and an enhanced peak quantum efficiency of similar to 64%. The thermal noise limited detectivity is estimated to be similar to 3.3 x 10(13) cm.Hz(1/2)W(-1).
引用
收藏
页数：4
相关论文
共 16 条
[1]   Solar-blind MSM-photodetectors based on AlxGa1-xN/GaN hetero structures grown by MOCVD [J].
Averine, S. V. ;
Kumetzov, P. I. ;
Zhitov, V. A. ;
Alkeev, N. V. .
SOLID-STATE ELECTRONICS, 2008, 52 (05) :618-624
[2]   Selective regrowth of Al0.30Ga0.70N p-i-n photodiodes [J].
Collins, CJ ;
Li, T ;
Lambert, DJH ;
Wong, MM ;
Dupuis, RD ;
Campbell, JC .
APPLIED PHYSICS LETTERS, 2000, 77 (18) :2810-2812
[3]   Electrical characteristics of magnesium-doped gallium nitride junction diodes [J].
Fedison, JB ;
Chow, TP ;
Lu, H ;
Bhat, IB .
APPLIED PHYSICS LETTERS, 1998, 72 (22) :2841-2843
[4]   High quality AlGaN solar-blind Schottky photodiodes fabricated on AlN/sapphire template [J].
Jiang, H. ;
Egawa, T. .
APPLIED PHYSICS LETTERS, 2007, 90 (12)
[5]   Low-frequency noise and performance of GaN p-n junction photodetectors [J].
Kuksenkov, DV ;
Temkin, H ;
Osinsky, A ;
Gaska, R ;
Khan, MA .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) :2142-2146
[6]   Back illuminated AlGaN solar-blind photodetectors [J].
Lambert, DJH ;
Wong, MM ;
Chowdhury, U ;
Collins, C ;
Li, T ;
Kwon, HK ;
Shelton, BS ;
Zhu, TG ;
Campbell, JC ;
Dupuis, RD .
APPLIED PHYSICS LETTERS, 2000, 77 (12) :1900-1902
[7]   GaN-based modulation doped FETs and UV detectors [J].
Morkoç, H ;
Di Carlo, A ;
Cingolani, R .
SOLID-STATE ELECTRONICS, 2002, 46 (02) :157-202
[8]   Deep traps in high resistivity AlGaN films [J].
Polyakov, AY ;
Smirnov, NB ;
Govorkov, AV ;
Redwing, JM .
SOLID-STATE ELECTRONICS, 1998, 42 (05) :831-838
[9]   Short-wavelength solar-blind detectors - Status, prospects, and markets [J].
Razeghi, M .
PROCEEDINGS OF THE IEEE, 2002, 90 (06) :1006-1014
[10]   AlGaN-based solar-blind Schottky photodetectors fabricated on AlN/sapphire template [J].
Sang Li-Wen ;
Qin Zhi-Xin ;
Cen Long-Bin ;
Shen Bo ;
Zhang Guo-Yi ;
Li Shu-Ping ;
Chen Hang-Yang ;
Liu Da-Yi ;
Kang Jun-Yong ;
Cheng Cai-Jing ;
Zhao Hong-Yan ;
Lu Zheng-Xiong ;
Ding Jia-Xin ;
Zhao Lan ;
Si Jun-Jie ;
Sun Wei-Guo .
CHINESE PHYSICS LETTERS, 2008, 25 (01) :258-261
12