Polarization engineering in III-nitride based ultraviolet light-emitting diodes

被引：7

作者：

Lin, Yu-Rui ^{[1
]}

Liou, Bo-Ting ^{[1
]}

Chang, Jih-Yuan ^{[1
]}

Kuo, Yen-Kuang ^{[1
]}

机构：

[1] Natl Changhua Univ Educ, Inst Photon, Changhua 500, Taiwan

来源：

PHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXI | 2013年 / 8619卷

关键词：

III-nitrides; quaternary; polarization; ultraviolet; light-emitting diodes; ALINGAN; ALLOYS;

D O I：

10.1117/12.2003779

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, the polarization effect in III-nitride based ultraviolet (UV) light-emitting diodes (LEDs) has been investigated theoretically. Some specific designs in active region are proposed to reduce the polarization effect and, hence, improve the device performance. Simulation results show that by utilizing properly designed quaternary AlInGaN material in active region, the hole injection efficiency can be enhanced due to the reduction of polarization mismatch between hetero-layers. On the other hand, the electron leakage is suppressed owing to that the effective potential height for electrons is increased. Therefore, the performance of UV LEDs is significantly improved by the polarization engineering in active region.

引用

页数：6

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