Brush plating of tin(II) selenide thin films

被引：105

作者：

Subramanian, B

Sanjeeviraja, C ^{[1
]}

Jayachandran, M

机构：

[1] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India

[2] Cent Electrochem Res Inst, Karaikkudi 630006, Tamil Nadu, India

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 234卷 / 2-3期

关键词：

characterization; semiconducting materials; solar cells;

D O I：

10.1016/S0022-0248(01)01697-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Brush plating technique has been adopted for the first time to coat tin selenide thin film on tin oxide coated conducting substrates at room temperature, 50degreesC and 60degreesC. Uniform and pinhole free films were deposited at potentials 5.0 V. XRD analyses show the polycrystalline nature of the films with orthorhombic structure. Optical studies show the indirect nature with a bandgap of 1.0 eV. SEM pictures show smooth and uniform surface morphology with a grain size of about 0.3 mum. Film roughness was characterized by atomic force microscopy. Mott-Schottky plot has been drawn to evaluate the semiconductor parameters. (C) 2002 Published by Elsevier Science B.V.

引用

页码：421 / 426

页数：6

共 16 条

[1]

BONDAR FA, 1970, THIN SOLID FILMS, V55, P255

[2]

CAR R, 1978, PHYS STATUS SOLIDI B, V86, P871

[3] ELECTRICAL-PROPERTIES AND OPTICAL-ABSORPTION OF SNSE EVAPORATED THIN-FILMS [J].