Modeling of SiGe-base heterojunction bipolar transistor with gaussian doping distribution

被引：5

作者：

Zareba, A ^{[1
]}

Lukasiak, L ^{[1
]}

Jakubowski, A ^{[1
]}

机构：

[1] Warsaw Univ Technol, Inst Microelect & Optoelect, PL-00662 Warsaw, Poland

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 12期

关键词：

heterojunction bipolar transistor; collector current; base transit time;

D O I：

10.1016/S0038-1101(01)00193-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The results of numerical modeling of the base transit time and collector current of SiGe-base heterojunction bipolar transistors with a Gaussian base doping profile and two Ge profiles (linearly graded and box) are presented for the first time. The importance of including the dependence of minority carrier mobility on the drift field and the dependence of the effective density of states on the Ge concentration along the base is demonstrated through the analysis of base transit time and collector current. A function describing the decrease of the density of states product in strained SiGe layers with increasing Ge concentration is proposed. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：2029 / 2032

页数：4

共 8 条

[1] SI/SIGE EPITAXIAL-BASE TRANSISTORS .1. MATERIALS, PHYSICS, AND CIRCUITS [J].

HARAME, DL ;

COMFORT, JH ;

CRESSLER, JD ;

CRABBE, EF ;

SUN, JYC ;

MEYERSON, BS ;

TICE, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (03) :455-468

[2] Analytical expressions of base transit time for SiGe HBTs with retrograde base profiles [J].

Kwok, KH .

SOLID-STATE ELECTRONICS, 1999, 43 (02) :275-283

[3] Low frequency conductance voltage analysis of Si/GexSi1-x/Si heterojunction bipolar transistors [J].

Neugroschel, A ;

Li, GX ;

Sah, CT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2000, 47 (01) :187-196

[4] Profile design considerations for minimizing base transit time in SiGe HBT's [J].

Patri, VS ;

Kumar, MJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (08) :1725-1731

[5]

Prinz E. J., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P639, DOI 10.1109/IEDM.1989.74361

[6] MEASUREMENTS OF BANDGAP NARROWING IN SI BIPOLAR-TRANSISTORS [J].

SLOTBOOM, JW ;

DEGRAAFF, HC .

SOLID-STATE ELECTRONICS, 1976, 19 (10) :857-862

[7] OPTIMUM BASE DOPING PROFILE FOR MINIMUM BASE TRANSIT-TIME [J].

SUZUKI, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (09) :2128-2133

[8] BASE TRANSIT-TIME OF SHALLOW-BASE BIPOLAR-TRANSISTORS CONSIDERING VELOCITY SATURATION AT BASE-COLLECTOR JUNCTION [J].

SUZUKI, K ;

NAKAYAMA, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (03) :623-628

← 1 →