Thermal analysis of GaN laser diodes in a package structure

被引：9

作者：

Feng Mei-Xin ^{[1
,2
]}

Zhang Shu-Ming ^{[2
]}

Jiang De-Sheng ^{[1
]}

Liu Jian-Ping ^{[2
]}

Wang Hui ^{[2
]}

Zeng Chang ^{[1
,2
]}

Li Zeng-Cheng ^{[1
,2
]}

Wang Huai-Bing ^{[2
]}

Wang Feng ^{[2
]}

Yang Hui ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China

来源：

CHINESE PHYSICS B | 2012年 / 21卷 / 08期

基金：

中国国家自然科学基金;

关键词：

laser diodes; thermal; GaN; CONTINUOUS-WAVE OPERATION; TEMPERATURE; LIFETIME;

D O I：

10.1088/1674-1056/21/8/084209

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.

引用

页数：6

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