Ferroelectric properties of Au/Bi3.25La0.75Ti3O12/ITO thin film capacitors

被引：0

作者：

Pak, J ^{[1
]}

Nam, K ^{[1
]}

Lee, J ^{[1
]}

Park, G ^{[1
]}

机构：

[1] Sogang Univ, Dept Phys, Seoul 121742, South Korea

来源：

FERROELECTRICS | 2005年 / 328卷

关键词：

FRAM; Bi3.25La0.75Ti3O12; ferroelectric properties; fatigue;

D O I：

10.1080/00150190500311516

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Characterizations on the crystallization, chemical composition and electrical property of pulsed laser deposited Bi-3.25 La-0.75 Ti-3 O-12 thin film with a thickness of 200 nm was investigated under various post-annealing treatments. Films annealed at 650 degrees C showed a relatively large ferroelectric property compared to other films, consisting with remnant polarization and coercive field values of 14 similar to 16 mu C /cm(2) and 90 similar to 100 kV/cm, respectively. The films were found to be fatigue resistive but their hysteresis loops before and after undergoing 1 x 10(11) switching cycles showed a shift to the positive field. The n-type semiconducting property of the ITO electrode seems to be the main reason for concentrating the polarity to the positive electric field.

引用

页码：121 / 125

页数：5

共 9 条

[1] Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi2Ta2O9 thin films [J].