Yellow-red emission from (Ga,In)N heterostructures

被引：84

作者：

Damilano, B. ^{[1
]}

Gil, B. ^{[2
]}

机构：

[1] CRHEA CNRS, F-06560 Valbonne, France

[2] Univ Montpellier 2, CNRS INP UMR 5221, Lab Charles Coulomb, F-34095 Montpellier, France

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2015年 / 48卷 / 40期

关键词：

InGaN; light emitting diodes; quantum wells; yellow; red; white; growth; LIGHT-EMITTING-DIODES; MULTIPLE-QUANTUM-WELLS; CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; HIGH-EFFICIENCY; INGAN FILMS; PIEZOELECTRIC FIELDS; BAND-GAP; STRAIN RELAXATION; THERMAL-STABILITY;

D O I：

10.1088/0022-3727/48/40/403001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

(Ga,In)N-based light emitting devices are very efficient in producing blue light and to a lesser extent green. Extending their spectral range to longer wavelengths while maintaining high efficiency is a challenge due to material and physical issues related to high-In content (Ga,In)N alloys. We review the current status of yellow and red emitters (light emitting diodes and laser diodes) based on this material system. We also describe the state-of-the-art of devices mixing blue-yellow or red-blue-green coloured light, such as monolithic phosphor-free white light emitting diodes and full-colour micro-displays.

引用

页数：24

共 232 条

[1] Low Threshold Current Density InGaN Based 520-530nm Green Laser Diodes on Semi-Polar {20(2)over-bar1} Free-Standing GaN Substrates [J].

Adachi, Masahiro ;

Yoshizumi, Yusuke ;

Enya, Yohei ;

Kyono, Takashi ;

Sumitomo, Takamichi ;

Tokuyama, Shinji ;

Takagi, Shinpei ;

Sumiyoshi, Kazuhide ;

Saga, Nobuhiro ;

Ikegami, Takatoshi ;

Ueno, Masaki ;

Katayama, Koji ;

Nakamura, Takao .

APPLIED PHYSICS EXPRESS, 2010, 3 (12)

[2] N-Polar III-Nitride Green (540 nm) Light Emitting Diode [J].

Akyol, Fatih ;

Nath, Digbijoy N. ;

Gur, Emre ;

Park, Pil Sung ;

Rajan, Siddharth .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (05)

[3] Selective area growth of In(Ga)N/GaN nanocolumns by molecular beam epitaxy on GaN-buffered Si(111): from ultraviolet to infrared emission [J].

Albert, S. ;

Bengoechea-Encabo, A. ;

Sanchez-Garcia, M. A. ;

Kong, X. ;

Trampert, A. ;

Calleja, E. .

NANOTECHNOLOGY, 2013, 24 (17)

[4]

[Anonymous], WIDE BAND GAP SEMICO

[5] Near-infrared emitting In-rich InGaN layers grown directly on Si: Towards the whole composition range [J].

Aseev, Pavel ;

Soto Rodriguez, Paul E. D. ;

Gomez, Victor J. ;

Alvi, Naveed ul Hassan ;

Manuel, Jose M. ;

Morales, Francisco M. ;

Jimenez, Juan J. ;

Garcia, Rafael ;

Senichev, Alexander ;

Lienau, Christoph ;

Calleja, Enrique ;

Noetzel, Richard .

APPLIED PHYSICS LETTERS, 2015, 106 (07)

[6] Band bending at the surfaces of In-rich InGaN alloys [J].

Bailey, L. R. ;

Veal, T. D. ;

King, P. D. C. ;

McConville, C. F. ;

Pereiro, J. ;

Grandal, J. ;

Sanchez-Garcia, M. A. ;

Munoz, E. ;

Calleja, E. .

JOURNAL OF APPLIED PHYSICS, 2008, 104 (11)

[7] Nitride-based quantum dot visible lasers [J].

Banerjee, A. ;

Frost, T. ;

Bhattacharya, P. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2013, 46 (26)

[8] Ridge waveguide InGaN/GaN quantum dot edge emitting visible lasers [J].

Banerjee, Animesh ;

Frost, Thomas ;

Jahangir, Shafat ;

Stark, Ethan ;

Bhattacharya, Pallab .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 5, 2013, 10 (05) :816-819

[9]

BARANOVSKII SD, 1978, SOV PHYS SEMICOND+, V12, P1328

[10] Development of green, yellow, and amber light emitting diodes using InGaN multiple quantum well structures [J].

Barletta, Philip T. ;

Berkman, E. Acar ;

Moody, Baxter F. ;

El-Masry, Nadia A. ;

Emara, Ahmed M. ;

Reed, Mason J. ;

Bedair, S. M. .

APPLIED PHYSICS LETTERS, 2007, 90 (15)

← 1 2 3 4 5 6 7 8 9 10 →