Tin Selenide (SnSe): Growth, Properties, and Applications

被引：289

作者：

Shi, Weiran ^{[1
]}

Gao, Minxuan ^{[1
]}

Wei, Jinping ^{[1
]}

Gao, Jianfeng ^{[1
]}

Fan, Chenwei ^{[1
]}

Ashalley, Eric ^{[1
]}

Li, Handong ^{[2
]}

Wang, Zhiming ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Sichuan, Peoples R China

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Sch Microelect & Solid State Elect, Chengdu 610054, Sichuan, Peoples R China

来源：

ADVANCED SCIENCE | 2018年 / 5卷 / 04期

基金：

中国国家自然科学基金;

关键词：

doping; growth; optoelectronics; thermoelectric materials; tin selenide; TOPOLOGICAL CRYSTALLINE INSULATOR; THERMOELECTRIC PERFORMANCE; THIN-FILMS; OPTICAL-PROPERTIES; PHOTOVOLTAIC PROPERTIES; THERMAL-CONDUCTIVITY; PHASE SYNTHESIS; ANODE MATERIAL; PRESSURE; ION;

D O I：

10.1002/advs.201700602

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The indirect bandgap semiconductor tin selenide (SnSe) has been a research hotspot in the thermoelectric fields since a ZT (figure of merit) value of 2.6 at 923 K in SnSe single crystals along the b-axis is reported. SnSe has also been extensively studied in the photovoltaic (PV) application for its extraordinary advantages including excellent optoelectronic properties, absence of toxicity, cheap raw materials, and relative abundance. Moreover, the thermoelectric and optoelectronic properties of SnSe can be regulated by the structural transformation and appropriate doping. Here, the studies in SnSe research, from its evolution to till now, are reviewed. The growth, characterization, and recent developments in SnSe research are discussed. The most popular growth techniques that have been used to prepare SnSe materials are discussed in detail with their recent progress. Important phenomena in the growth of SnSe as well as the problems remaining for future study are discussed. The applications of SnSe in the PV fields, Li-ion batteries, and other emerging fields are also discussed.

引用

页数：22

共 105 条

[51] Enhanced thermoelectric performance of p-type SnSe doped with Zn [J].