Influence of oxygen partial pressure on the wetting of SiC by a Co-Si alloy

被引：24

作者：

Mailliart, O. ^{[2
]}

Hodaj, F. ^{[1
]}

Chaumat, V. ^{[2
]}

Eustathopoulos, N. ^{[1
]}

机构：

[1] INP Grenoble UJF, CNRS, SIMAP, UMR 5266, F-38402 St Martin Dheres, France

[2] CEA, F-38054 Grenoble, France

来源：

MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 2008年 / 495卷 / 1-2期

关键词：

Wetting; Silicides; Silicon carbide; Oxidation; Interfaces;

D O I：

10.1016/j.msea.2007.11.090

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this investigation the influence of oxygen partial pressure P-o2 on the wetting of SiC by a Co-Si alloy was studied. Wetting experiments were carried out in argon with different oxygen contents (from 5 to 1000 ppm). The relationship between wetting and deoxidation of surfaces (SiC and Co-Si alloy) was investigated. Calculations were performed to evaluate the temperature range over which deoxidation is possible. These calculations are in agreement with the experimental results. (C) 2008 Published by Elsevier B.V.

引用

页码：174 / 180

页数：7

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