Reliability study of TaON capacitors: From leakage current characterization to ESD robustness prediction

被引：2

作者：

Verchiani, M. ^{[1
]}

Bouyssou, E. ^{[1
]}

Fiannaca, G. ^{[1
]}

Cantin, F. ^{[1
]}

Anceau, C. ^{[1
]}

Ranson, P. ^{[2
]}

机构：

[1] STMicroelect, F-37071 Tours 2, France

[2] Univ Orleans, GREMI, F-45067 Orleans 2, France

来源：

MICROELECTRONICS RELIABILITY | 2008年 / 48卷 / 8-9期

关键词：

Nitrogen compounds - Leakage currents - Metal insulator boundaries;

D O I：

10.1016/j.microrel.2008.07.032

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrostatic discharges are a permanent threaten for integrated metal-insulator-metal capacitors. Hence, the development of comprehensive models able to predict the capacitors robustness against ESD aggression is of major importance to adopt the adequate protection strategies. This work focuses more particularly on the failure mechanisms of TaON capacitors submitted to HBM ESD waves. From leakage current characterization to thermal dissipation effects, we propose a complete reliability model which accurately foresees not only ESD failure voltage, but also TDDB capacitors lifetime. (C) 2008 Elsevier Ltd. All rights reserved.

引用

页码：1412 / 1416

页数：5