Back-side-illuminated image sensor with burst capturing speed of 5.2 Tpixel per second

被引：4

作者：

Arai, T. ^{[1
]}

Yonai, J. ^{[1
]}

Hayashida, T. ^{[1
]}

Ohtake, H. ^{[1
]}

van Kuijk, H.

Etoh, T. Goji

机构：

[1] NHK Sci & Technol Res Labs, Setagaya Ku, Tokyo 1578510, Japan

来源：

SENSORS, CAMERAS, AND SYSTEMS FOR INDUSTRIAL AND SCIENTIFIC APPLICATIONS XIV | 2013年 / 8659卷

关键词：

ISIS; ultrahigh-speed; high-sensitivity; 5.2; Tpixel/s;

D O I：

10.1117/12.2003496

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have developed a back-side-illuminated image sensor with a burst capturing speed of 5.2 Tpixels per second. Its sensitivity was 252 V/lux.s (12.7 times that of a front-side-illuminated image sensor) in an evaluation. Sensitivity of a camera system was 2,000 lux F90. The increased sensitivity resulted from optical and time aperture ratios of 100% and also by increasing from a higher optical utilization ratio. The ultrahigh-speed shooting resulted from the use of in-situ storage image sensor. Reducing the wiring resistance and dividing the image area into eight blocks increased the maximum frame rate to 16.7 million frames per second. The total pixel count was 760 horizontally and 411 vertically. The product of the pixel count and maximum frame rate is often used as a figure of merit for high-speed imaging devices, and in this case, 312,360 multiplied by 16.7 million yields 5.2 Tpixels per second. The burst capturing speed is thus 5.2 Tpixels per second, which is the highest speed achieved in high-speed imaging devices to date.

引用

页数：10

共 5 条

[1]

Arai T., 2010, P SPIE PHOTONICS W, V7598

[2]

Arai T., 2011, P SPIE PHOTONICS W, V7934, p79340J

[3]

Etoh T. G., 2002, P 2002 IEEE INT SOL, P46

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Arai, T. ;

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Kurita, T. ;

Tanioka, K. ;

Maruyama, H. ;

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27TH INTERNATIONAL CONGRESS ON HIGH SPEED PHOTOGRAPHY AND PHOTONICS, PRTS 1-3, 2007, 6279

[5] Development of a 300,000-pixel ultrahigh-speed, high-sensitivity CCD [J].

Ohtake, H. ;

Hayashida, T. ;

Kitamura, K. ;

Arai, T. ;

Yonai, J. ;

Tanioka, K. ;

Maruyama, H. ;

Etoh, T. Goji ;

Poggemann, D. ;

Ruckelshausen, A. ;

Van Kuijk, H. ;

Bosiers, Jan T. .

SEMICONDUCTOR PHOTODETECTORS III, 2006, 6119

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