Temperature dependent surface photovoltage spectra of type I GaAs1-xSbx/GaAs multiple quantum well structures

被引：4

作者：

Sitarek, P. ^{[1
]}

Misiewicz, J. ^{[1
]}

Huang, Y. S. ^{[2
]}

Hsu, H. P. ^{[3
]}

Tiong, K. K. ^{[4
]}

机构：

[1] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

[2] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan

[3] Ming Chi Univ Technol, Dept Elect Engn, Taipei 243, Taiwan

[4] Natl Taiwan Ocean Univ, Dept Elect Engn, Keelung 202, Taiwan

来源：

JOURNAL OF APPLIED PHYSICS | 2013年 / 113卷 / 07期

关键词：

OPTICAL-PROPERTIES; GAAS;

D O I：

10.1063/1.4792065

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present temperature dependent surface photovoltage spectra of GaAs1-xSbx/GaAs multiple quantum well structures. Our previous studies [Sitarek et al., J. Appl. Phys. 105, 123523 (2009)] have identified all features present in the surface photovoltage spectra and showed weak type-I band alignment in the investigated GaAsSb/GaAs system. By analyzing the changes in the relative intensity of features near the energy of fundamental transitions caused by the temperature variations, we are able to determine the energy difference between electronic states localized in GaAsSb quantum well and conduction band edge in the GaAs barrier. In addition, the Bose-Einstein parameters that describe the temperature dependences of 1hh-1e transitions are evaluated and discussed. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4792065]

引用

页数：4

共 15 条

[1] Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements [J].

Blume, G. ;

Hild, K. ;

Marko, I. P. ;

Hosea, T. J. C. ;

Yu, S. -Q. ;

Chaparro, S. A. ;

Samal, N. ;

Johnson, S. R. ;

Zhang, Y. -H. ;

Sweeney, S. J. .

JOURNAL OF APPLIED PHYSICS, 2012, 112 (03)

[2] Growth and optical properties of GaAsSb quantum wells for 1.3 μm VCSELs [J].

Cunningham, JE ;

Dinu, M ;

Shah, J ;

Quochi, F ;

Kilper, D ;

Jan, WY ;

Williams, MD ;

Mills, A ;

Henderson, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (05) :1948-1952

[3] Electroreflectance and surface photovoltage spectroscopies of semiconductor structures using an indium-tin-oxide-coated glass electrode in soft contact mode [J].

Datta, S ;

Ghosh, S ;

Arora, BM .

REVIEW OF SCIENTIFIC INSTRUMENTS, 2001, 72 (01) :177-183

[4] Bound exciton effect and carrier escape mechanisms in temperature-dependent surface photovoltage spectroscopy of a single quantum well [J].

Datta, S ;

Arora, BM ;

Kumar, S .

PHYSICAL REVIEW B, 2000, 62 (20) :13604-13611

[5] Optical properties of strained antimonide-based heterostructures [J].

Dinu, M ;

Cunningham, JE ;

Quochi, F ;

Shah, J .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) :1506-1512

[6] Surface photovoltage studies of InxGa1-xAs and InxGa1-xAs1-yNy quantum well structures -: art. no. 205324 [J].

Dumitras, G ;

Riechert, H ;

Porteanu, H ;

Koch, F .

PHYSICAL REVIEW B, 2002, 66 (20) :1-8

[7] Determination of band offsets in semiconductor quantum well structures using surface photovoltage [J].

Dumitras, G ;

Riechert, H .

JOURNAL OF APPLIED PHYSICS, 2003, 94 (06) :3955-3959

[8] BAND LINEUP IN GAAS1-CHI-SB-CHI-GAAS STRAINED-LAYER MULTIPLE QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].

JI, G ;

AGARWALA, S ;

HUANG, D ;

CHYI, J ;

MORKOC, H .

PHYSICAL REVIEW B, 1988, 38 (15) :10571-10577

[9] INTERBAND OPTICAL-TRANSITIONS BETWEEN CONFINED AND UNCONFINED STATES IN QUANTUM-WELLS [J].

KSENDZOV, A ;

PIKE, WT ;

LARSSON, A .

PHYSICAL REVIEW B, 1993, 47 (04) :2228-2232

[10] INTERBAND CRITICAL-POINTS OF GAAS AND THEIR TEMPERATURE-DEPENDENCE [J].

LAUTENSCHLAGER, P ;

GARRIGA, M ;

LOGOTHETIDIS, S ;

CARDONA, M .

PHYSICAL REVIEW B, 1987, 35 (17) :9174-9189

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