FI-STM investigation of fullerenes adsorbed on the semiconductor surfaces

被引：0
|
作者：
Hashizume, T [1 ]
Sakurai, T [1 ]
机构：
[1] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 98077,JAPAN
来源：
SCIENCE REPORTS OF THE RESEARCH INSTITUTES TOHOKU UNIVERSITY SERIES A-PHYSICS CHEMISTRY AND METALLURGY | 1997年 / 44卷 / 01期
关键词：
C-60; fullerenes; STM; metal; semiconductor; adsorption; film growth;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：17 / 45
页数：29
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