Silver metallization for advanced interconnects

被引：99

作者：

Manepalli, R ^{[1
]}

Stepaniak, F ^{[1
]}

Bidstrup-Allen, SA ^{[1
]}

Kohl, PA ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Chem Engn, Atlanta, GA 30332 USA

来源：

IEEE TRANSACTIONS ON ADVANCED PACKAGING | 1999年 / 22卷 / 01期

关键词：

corrosion; 85/85; tests; electrochemical migration; low resistivity; residual stress; silver dendrites; silver metallization; temperature humidity and bias (THB) test;

D O I：

10.1109/6040.746536

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silver metal has the highest room-temperature electrical conductivity of any substance; however, it has found limited acceptance in the electronic industry (e.g., silver filled epoxy) due to the high rate of metal corrosion and migration causing dendrites and electrical failures. With decreasing transistor feature sizes, device-operating voltages have scaled down considerably. In this paper, the reliability of silver-and potential benefits: of silver metallization are:discussed in terms of future trends in microelectronic interconnections, Experimental data supports existing reliability models indicating that electrochemical migration failure modes may not be operative at low voltages. Silver metal corrosion and migration are studied under accelerated test conditions to obtain a qualitative understanding of the failure mechanism.

引用

页码：4 / 8

页数：5

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