Quantification of defects engineered in single layer MoS2

被引：35

作者：

Aryeetey, Frederick ^{[1
]}

Ignatova, Tetyana ^{[2
]}

Aravamudhan, Shyam ^{[1
]}

机构：

[1] North Carolina A&T State Univ, Dept Nanoengn, 2907 East Gate City Blvd, Greensboro, NC 27401 USA

[2] Univ North Carolina Greensboro, Dept Nanosci, 2907 East Gate City Blvd, Greensboro, NC 27401 USA

来源：

RSC ADVANCES | 2020年 / 10卷 / 39期

基金：

美国国家科学基金会;

关键词：

LARGE-AREA; RAMAN; PHOTOLUMINESCENCE; GRAPHENE;

D O I：

10.1039/d0ra03372c

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Atomic defects are controllably introduced in suspended single layer molybdenum disulfide (1L MoS2) using helium ion beam. Vacancies exhibit one missing atom of molybdenum and a few atoms of sulfur. Quantification was done using a Scanning Transmission Electron Microscope (STEM) with an annular detector. Experimentally accessible inter-defect distance was employed to measure the degree of crystallinity in 1L MoS2. A correlation between the appearance of an acoustic phonon mode in the Raman spectra and the inter-defect distance was established, which introduces a new methodology for quantifying defects in two-dimensional materials such as MoS2.

引用

页码：22996 / 23001

页数：6

共 31 条

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