Giant flexoelectric effect through interfacial strain relaxation

被引:74
作者
Lee, Daesu [1 ]
Noh, Tae Won [1 ]
机构
[1] Seoul Natl Univ, Dept Phys & Astron, Res Ctr Funct Interfaces, Seoul 151747, South Korea
来源
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES | 2012年 / 370卷 / 1977期
基金
新加坡国家研究基金会;
关键词
flexoelectric effect; ferroelectric; epitaxial thin film; strain gradient; FERROELECTRIC THIN-FILMS; LEAD-ZIRCONATE-TITANATE; ELECTRIC-FIELD; HEXAGONAL PHASE; POLARIZATION; CERAMICS; CRYSTALS; STRESS; SUPERLATTICES; TEMPERATURE;
D O I
10.1098/rsta.2012.0200
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Interfacial strain gradients in oxide epitaxial thin films provide an interesting opportunity to study flexoelectric effects and their potential applications. Oxide epitaxial thin films can exhibit giant and tunable flexoelectric effects, which are six or seven orders of magnitude larger than those in conventional bulk solids. The strain gradient in an oxide epitaxial thin film can generate an electric field above 1 MVm(-1) by flexoelectricity, large enough to affect the physical properties of the film. Giant flexoelectric effects on ferroelectric properties are discussed in this overview of recent experimental observations.
引用
收藏
页码:4944 / 4957
页数:14
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