Ferroelectric Nonvolatile Nanowire Memory Circuit Using a Single ZnO Nanowire and Copolymer Top Layer

被引：44

作者：

Lee, Young Tack ^{[1
]}

Jeon, Pyo Jin ^{[1
]}

Lee, Kwang H. ^{[1
]}

Ha, Ryong ^{[2
]}

Choi, Heon-Jin ^{[2
]}

Im, Seongil ^{[1
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 22期

关键词：

zinc oxide; nanowires; field-effect transistors; ferroelectric (FeFETs); one-dimensional (1D) electronics; memory inverter circuit; FIELD-EFFECT TRANSISTORS; GATE DIELECTRICS; PERFORMANCE; GERMANIUM; DEVICES; GROWTH; LOGIC;

D O I：

10.1002/adma.201201051

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A one-dimensional nonvolatile ferroelectric memory inverter circuit is demonstrated for the first time in a single ZnO nanowire. The circuit exhibits a large memory window and dynamic program/erase behavior. One part of the ZnO nanowire forms the channel of a top-gate ferroelectric field-effect transistor with a ferroelectric polymer while the rest is used as resistors. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3020 / 3025

页数：6

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