Mechanisms of Variation of the Unipolarity during Thermal Processing of Heavily Doped LiNbO3:ZnO Crystals

被引：1
|
作者：
Palatnikov, M. N. [1 ]
Sandler, V. A. [1 ]
Sidorov, N. V. [1 ]
Makarova, O. V. [1 ]
机构：
[1] Russian Acad Sci, Tananaev Inst Chem & Technol Rare Elements & Mine, Fed Res Ctr Kola Sci Ctr, Apatity 184209, Russia
来源：
TECHNICAL PHYSICS | 2020年 / 65卷 / 08期
关键词：
PIEZOELECTRIC PROPERTIES; ELECTRICAL-CONDUCTIVITY; ANOMALIES;
D O I：
10.1134/S1063784220080149
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The phenomenological mechanisms for increasing the unipolarity under thermal processing in the short-circuiting conditions for heavily doped LiNbO3:ZnO crystals are analyzed by comparing with the temperature behavior of nominally pure LiNbO3:ZnO crystals with the congruent composition. It is shown that an increase in the unipolarity and, hence, the disappearance of the domain structure in heavily doped LiNbO3:ZnO crystals is initiated by thermal decomposition of charged polar clusters stabilizing domain walls. The decomposition of polar clusters is accompanied with an abrupt jumpwise injection of extra charge carriers (Li(+)cations). As a result, the conductivity of LiNbO3:ZnO crystals at a temperature above 800 K is an order of magnitude higher than that of nominally pure LiNbO(3)crystals with the congruent composition. This leads to the degradation of the domain structure in LiNbO3:ZnO crystals in contrast to LiNbO(3)crystals with the congruent composition.
引用
收藏
页码：1246 / 1252
页数：7
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