The evolution of conducting filaments in forming-free resistive switching Pt/TaOx/Pt structures

被引：38
作者：
Kurnia, F. [1 ]
Liu, Chunli [1 ]
Jung, C. U. [1 ]
Lee, B. W. [1 ]
机构：
[1] Hankuk Univ Foreign Studies, Dept Phys, Yongin 449791, South Korea
来源：
APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 15期
基金：
新加坡国家研究基金会;
关键词：
RESISTANCE; NANOFILAMENTS; MEMORY;
D O I：
10.1063/1.4802263
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The forming-free (FF) and forming-required (FR) resistive switching behaviors of Pt/TaOx/Pt structures were analyzed. Changes in the length and shape of the conducting filaments (CFs) suggested different evolution processes in the FF and FR cells when the CFs grew from weaker filaments to stronger ones. In the FR cells, the filament changed from a conical shape to a cylindrical shape with no change in length. In the FF cells, the filament maintained a cylindrical shape while increasing its diameter and decreasing its length. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802263]
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页数：4
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