Sensing mechanism of hydrogen sensors based on palladium-loaded tungsten oxide (Pd-WO3)

被引:84
作者
Boudiba, Abdelhamid [1 ]
Roussel, Pascal [4 ]
Zhang, Chao [1 ]
Olivier, Marie-Georges [1 ]
Snyders, Rony [2 ,3 ]
Debliquy, Marc [1 ]
机构
[1] Univ Mons, Dept Mat Sci, Fac Engn, B-7000 Mons, Belgium
[2] Univ Mons, Lab Plasma Surface Interact Chem, B-7000 Mons, Belgium
[3] Mat Nova Res Ctr, B-7000 Mons, Belgium
[4] Ecole Natl Super Chim Lille, CNRS, Unite Catalyse & Chim Solide, UMR 8181, Villeneuve Dascq, France
关键词
Pd-loaded WO3; H-2 sensing mechanism; XRD; UV-vis-NIR; WO3; THIN-FILMS; GAS SENSOR; SELECTIVITY;
D O I
10.1016/j.snb.2012.09.063
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
This paper presents a study on hydrogen sensing mechanism of Pd-loaded tungsten oxide (Pd-WO3). WO3 nanoparticles (sphere-like) were prepared and characterized by transmission electron microscopy (TEM), scanning electron microscope (SEM) and X-ray diffraction (XRD) analysis. The synthesized WO3 nanoparticles was loaded with palladium (Pd) catalyst at 1 at% and annealed in air at 400 degrees C. The chemical composition of the elements and their spatial distribution on the surface were determined by X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (ToF-SIMS) respectively. Pd-WO3 thick film was prepared by screen-printing on alumina substrates fitted with gold electrodes and a platinum heater. The responses to 25-200 ppm hydrogen (diluted in air) were measured at operating temperatures ranging from 200 to 280 degrees C in dry air and with 50% relative humidity. The changes in the optical properties (on the surface) and crystal phases (in bulk) of Pd-WO3 in contact with hydrogen were investigated by UV-vis-NIR and XRD respectively. The in situ characterizations were carried out in different conditions, 3% H-2 diluted in synthetic air/nitrogen at temperatures ranging from 25 to 200 degrees C. The changes in the crystal phases, formation of hydrogen tungsten bronze, on the surface or bulk were correlated with the electrical responses. A sensing mechanism of Pd-WO3 for H-2 is proposed and discussed. (C) 2012 Elsevier B. V. All rights reserved.
引用
收藏
页码:84 / 93
页数:10
相关论文
共 31 条
[1]   Electrical properties of reactively sputtered WO3 thin films as ozone gas sensor [J].
Aguir, K ;
Lemire, C ;
Lollman, DBB .
SENSORS AND ACTUATORS B-CHEMICAL, 2002, 84 (01) :1-5
[2]   Conduction model of metal oxide gas sensors [J].
Barsan, N ;
Weimar, U .
JOURNAL OF ELECTROCERAMICS, 2001, 7 (03) :143-167
[3]   Characterization of a WO3 thin film chlorine sensor [J].
Bender, F ;
Kim, C ;
Mlsna, T ;
Vetelino, JF .
SENSORS AND ACTUATORS B-CHEMICAL, 2001, 77 (1-2) :281-286
[4]   Preparation of highly selective, sensitive and stable hydrogen sensors based on Pd-doped tungsten trioxide [J].
Boudiba, A. ;
Zhang, C. ;
Navio, C. ;
Bittencourt, C. ;
Snyders, R. ;
Debliquy, M. .
EUROSENSORS XXIV CONFERENCE, 2010, 5 :180-183
[5]   Fabrication of WO3 nanodot-based microsensors highly sensitive to hydrogen [J].
Calavia, R. ;
Mozalev, A. ;
Vazquez, R. ;
Gracia, I. ;
Cane, C. ;
Ionescu, R. ;
Llobet, E. .
SENSORS AND ACTUATORS B-CHEMICAL, 2010, 149 (02) :352-361
[6]   Electrochromic Property Dependent on Oxygen Gas Flow Rate and Films Thickness of Sputtered WO3 Films [J].
Chananonnawathorn, C. ;
Pudwat, S. ;
Horprathum, M. ;
Eiamchai, P. ;
Limnontakul, P. ;
Salawan, C. ;
Aiempanakit, K. .
ISEEC, 2012, 32 :752-758
[7]   TeO2-WO3 glasses:: Infrared, XPS and XANES structural characterizations [J].
Charton, P ;
Gengembre, L ;
Armand, P .
JOURNAL OF SOLID STATE CHEMISTRY, 2002, 168 (01) :175-183
[8]   Opportunities and challenges in science and technology of WO3 for electrochromic and related applications [J].
Deb, Satyen K. .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2008, 92 (02) :245-258
[9]   Characterization of tin dioxide film for chemical vapors sensor [J].
Hafaiedh, I. ;
Helali, S. ;
Cherif, K. ;
Abdelghani, A. ;
Tournier, G. .
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2008, 28 (5-6) :584-587
[10]  
Heiland G., Chemical Sensor Technology, V1, P15, DOI [DOI 10.1016/B978-0-444-98901-7.50007-5, 10.1016/B978-0-444-98901-7.50007-5]