Low loss 40 Gbit/s silicon modulator based on interleaved junctions and fabricated on 300 mm SOI wafers

被引：69

作者：

Marris-Morini, D. ^{[1
]}

Baudot, C. ^{[2
]}

Fedeli, J-M. ^{[3
]}

Rasigade, G. ^{[1
]}

Vulliet, N. ^{[3
]}

Souhaite, A. ^{[2
,3
]}

Ziebell, M. ^{[1
]}

Rivallin, P. ^{[3
]}

Olivier, S. ^{[3
]}

Crozat, P. ^{[1
]}

Le Roux, X. ^{[1
]}

Bouville, D. ^{[1
]}

Menezo, S. ^{[3
]}

Boeuf, F. ^{[2
]}

Vivien, L. ^{[1
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, CNRS, UMR 8622, F-91405 Orsay, France

[2] ST Microelect, F-38920 Crolles, France

[3] CEA Grenoble, LETI, F-38054 Grenoble 9, France

来源：

OPTICS EXPRESS | 2013年 / 21卷 / 19期

关键词：

MACH-ZEHNDER MODULATORS; HIGH-SPEED; OPTICAL MODULATOR; PN JUNCTIONS; PHOTONICS;

D O I：

10.1364/OE.21.022471

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We demonstrate high-speed silicon modulators based on carrier depletion in interleaved pn junctions fabricated on 300mm-SOI wafers using CMOS foundry facilities. 950 mu m-long Mach Zehnder (MZ) and ring resonator (RR) modulator with a 100 mu m radius, were designed, fabricated and characterized. 40 Gbit/s data transmission has been demonstrated for both devices. The MZ modulator exhibited a high extinction ratio of 7.9 dB with only 4 dB on-chip losses at the operating point. (c) 2013 Optical Society of America

引用

页码：22471 / 22475

页数：5

共 13 条

[11] Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators [J].