Weak localization in boron nitride encapsulated bilayer MoS2

被引：12

作者：

Papadopoulos, Nikos ^{[1
]}

Watanabe, Kenji ^{[2
]}

Taniguchi, Takashi ^{[2
]}

van der Zant, Herre S. J. ^{[1
]}

Steele, Gary A. ^{[1
]}

机构：

[1] Delft Univ Technol, Kavli Inst Nanosci, Lorentzweg 1, NL-2628 CJ Delft, Netherlands

[2] Natl Inst Mat Sci, 1-1 Namiki, Tsukuba, Ibaraki 3050044, Japan

来源：

PHYSICAL REVIEW B | 2019年 / 99卷 / 11期

关键词：

SPIN; MAGNETORESISTANCE; COHERENCE; TRANSPORT;

D O I：

10.1103/PhysRevB.99.115414

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present measurements of weak localization on hexagonal boron nitride encapsulated bilayer MoS2. From the analysis we obtain information regarding the phase coherence and the spin diffusion of the electrons. We find that the encapsulation with boron nitride provides higher mobilities in the samples, and the phase coherence shows improvement, while the spin relaxation does not exhibit any significant enhancement compared to nonencapsulated MoS2. The spin relaxation time is in the order of a few picoseconds, indicating a fast intravalley spin-flip rate. Lastly, the spin-flip rate is found to be independent from electron density in the current range, which can be explained through counteracting spin-flip scattering processes based on electron-electron Coulomb scattering and extrinsic Bychkov-Rashba spin-orbit coupling.

引用

页数：5

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