A 0.55-V, 28-ppm/°C, 83-nW CMOS Sub-BGR With UltraLow Power Curvature Compensation

被引:31
作者
Liu, Lianxi [1 ]
Mu, Junchao [2 ]
Zhu, Zhangming [1 ]
机构
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian 710071, Shaanxi, Peoples R China
[2] Xidian Univ, Sch Microelect, Xian 710071, Shaanxi, Peoples R China
基金
中国国家自然科学基金;
关键词
Ultra-low Power; low voltage; bandgap reference; curvature compensation; self-powered device; switch capacitor; SUBTHRESHOLD VOLTAGE REFERENCE; BANDGAP REFERENCE; REFERENCE CIRCUIT; PPM/DEGREES-C; REFERENCES; NW;
D O I
10.1109/TCSI.2017.2711923
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper proposes an ultralow power, high precision sub bandgap voltage reference (sub-BGR) for low-voltage self-powered devices. A novel ultralow power curvature compensation circuit is proposed to improve the temperature coefficient over a wide temperature range. A switch capacitor voltage divider with improved leakage current reduction switches is used to obtain a high accuracy and a low power. To minimize the clock feedthrough and charge injection in the switches, a clock scaling down circuit is proposed, that effectively improves the line sensitivity (LS) of the sub-BGR. The proposed sub-BGR is implemented in a 0.18-mu m standard CMOS process with a total area of 0.061 mm(2). After measuring 30 chips, the average power consumption is 83 nW at 0.55 V of supply at 27 degrees C. In the supply voltage range of 0.55 to 1 V, the LS is 0.059%/V, and the error is +/- 0.75% (3 sigma) after trimming.
引用
收藏
页码:95 / 106
页数:12
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