In-situ detection of interface defects in a-Si:H/c-Si heterojunction during plasma processing

被引：14

作者：

Nunomura, Shota ^{[1
]}

Sakata, Isao ^{[1
]}

Matsubara, Koji ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Ctr Photovolta, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

来源：

APPLIED PHYSICS EXPRESS | 2019年 / 12卷 / 05期

关键词：

HYDROGEN TERMINATION; AMORPHOUS-SILICON; DIFFUSION; SURFACES; SEMICONDUCTORS; PASSIVATION; FILMS;

D O I：

10.7567/1882-0786/ab128b

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Defects in hydrogenated amorphous silicon (a-Si:H)/crystalline silicon (c-Si) heterojunction have been detected via in situ photocurrent measurement during growth of a-Si:H and consecutive postannealing. During growth, defects are generated not only in the a-Si:H layer but also in c-Si. The defects in the a-Si:H layer are completely recovered by postannealing, whereas those in c-Si are partially recovered; the residual defects are formed in c-Si. Interestingly, the postannealing induces the formation of the interface defects at a-Si:H/c-Si, which may deteriorate the performances of a-Si:H/c-Si heterojunction solar cells. (C) 2019 The Japan Society of Applied Physics

引用

页数：5

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