Elaboration of Bi2Te3 by metal organic chemical vapor deposition

被引：57
作者：
Giani, A [1 ]
PascalDelannoy, F [1 ]
Boyer, A [1 ]
Foucaran, A [1 ]
Gschwind, M [1 ]
Ancey, P [1 ]
机构：
[1] IMRA EUROPE SA,F-06904 SOPHIA ANTIPOLIS,FRANCE
来源：
THIN SOLID FILMS | 1997年 / 303卷 / 1-2期
关键词：
chemical vapour deposition; bismuth; tellurium;
D O I：
10.1016/S0040-6090(97)00089-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Bi2Te3 layers were elaborated for the first time using metal organic chemical vapor deposition. The films composition is stoichiometric when the following conditions are verified: substrate temperature lower than 500 degrees C, VI/V ratio greater than 3, TMBi partial pressure lower than 2 x 10(-4) atm. By X-ray diffraction and MEB observation, we noticed the polycrystalline structure of the layers. The high thermoelectric power (+190 mu V K-1 for the p-type layer and -94 mu V K-1 for the n-type layer) of this material is promising for device applications. (C) 1997 Elsevier Science S.A.
引用
收藏
页码：1 / 3
页数：3
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