Elaboration of Bi2Te3 by metal organic chemical vapor deposition

被引：58

作者：

Giani, A ^{[1
]}

PascalDelannoy, F ^{[1
]}

Boyer, A ^{[1
]}

Foucaran, A ^{[1
]}

Gschwind, M ^{[1
]}

Ancey, P ^{[1
]}

机构：

[1] IMRA EUROPE SA,F-06904 SOPHIA ANTIPOLIS,FRANCE

来源：

THIN SOLID FILMS | 1997年 / 303卷 / 1-2期

关键词：

chemical vapour deposition; bismuth; tellurium;

D O I：

10.1016/S0040-6090(97)00089-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bi2Te3 layers were elaborated for the first time using metal organic chemical vapor deposition. The films composition is stoichiometric when the following conditions are verified: substrate temperature lower than 500 degrees C, VI/V ratio greater than 3, TMBi partial pressure lower than 2 x 10(-4) atm. By X-ray diffraction and MEB observation, we noticed the polycrystalline structure of the layers. The high thermoelectric power (+190 mu V K-1 for the p-type layer and -94 mu V K-1 for the n-type layer) of this material is promising for device applications. (C) 1997 Elsevier Science S.A.

引用

页码：1 / 3

页数：3

共 12 条

[1]

BOYER A, 1991, SENSOR ACTUAT A-PHYS, V25, P637

[2] CRYSTAL GROWTH + ORIENTATION IN SPUTTERED FILMS OF BISMUTH TELLURIDE [J].