Punch-through protection of SSDs

被引：9

作者：

Sadrozinski, H. F-W ^{[1
]}

Betancourt, C. ^{[1
]}

Bielecki, A. ^{[1
]}

Butko, Z. ^{[1
]}

Fadeyev, V. ^{[1
]}

Parker, C. ^{[1
]}

Ptak, N. ^{[1
]}

Wright, J. ^{[1
]}

机构：

[1] Univ Calif Santa Cruz, Santa Cruz Inst Particle Phys, Santa Cruz, CA 95064 USA

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2013年 / 699卷

关键词：

Silicon strip detectors; Punch-through; Radiation damage; High energy physics; SILICON MICROSTRIP DETECTORS; P+NP+;

D O I：

10.1016/j.nima.2012.04.062

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The effectiveness of punch-through protection (PTP) structures on n-on-p AC-coupled silicon strip detectors using pulses from a 1064 nm IR laser, which mimics beam accidents, is investigated. The voltages on the strip implants are measured as a function of the bias voltage and incoming particle flux. We present a 4-resistor model to describe the sensor after large particle fluxes, which is then used to characterize the effectiveness of PTP structures. The effectiveness of PTP structures is presented in terms of total strip implant to bias rail length, type of surface treatment used for strip isolation, coverage of the polysilicon bias resistor, and radiation damage from protons, neutrons and pions. Published by Elsevier B.V.

引用

页码：31 / 35

页数：5

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