Comparison of ICP-AlOx and ALD-Al2O3 layers for the rear surface passivation of c-Si Solar cells

被引：27

作者：

Veith, B. ^{[1
]}

Dullweber, T. ^{[1
]}

Siebert, M. ^{[1
]}

Kranz, C. ^{[1
]}

Werner, F. ^{[1
]}

Harder, N. -P. ^{[1
,2
]}

Schmidt, J. ^{[1
,3
]}

Roos, B. F. P. ^{[4
]}

Dippell, T. ^{[4
]}

Brendel, R. ^{[1
,3
]}

机构：

[1] Inst Solar Energy Res Hamelin ISFH, Ohrberg 1, D-31860 Emmerthal, Germany

[2] Leibniz Univ Hannover, Inst Mat & Bauelemente Elektronik, D-30167 Hannover, Germany

[3] Leibniz Univ Hannover, Inst Solid State Phys, D-30167 Hannover, Germany

[4] Singulus Technol AG, D-63796 Kahl am Main, Germany

来源：

PROCEEDINGS OF THE 2ND INTERNATIONAL CONFERENCE ON CRYSTALLINE SILICON PHOTOVOLTAICS (SILICONPV 2012) | 2012年 / 27卷

关键词：

Silicon; Surface passivation; Aluminum oxide; Solar Cells; ULTRATHIN AL2O3 FILMS; RECOMBINATION;

D O I：

10.1016/j.egypro.2012.07.080

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The deposition rate of the standard (i.e. sequential) atomic layer deposition (ALD) process is very low compared to the plasma-enhanced chemical vapour deposition (PECVD) process. Therefore, as a short- and medium-term perspective, PECVD aluminium oxide (AlOx) films might be better suited for the implementation into industrial-type solar cells than ALD-Al2O3 films. In this paper, we report results achieved with a newly developed PECVD deposition process for AlOx using an inductively coupled plasma (ICP). We compare the results to high-quality ALD-Al2O3 films. We examine a stack consisting of a thin AlOx passivation layer and a PECVD silicon nitride (SiNy) capping layer. Surface recombination velocities below 9 cm/s were measured on low-resistivity (1.4 Omega cm) p-type crystalline silicon wafers passivated either by ICP-PECVD-AlOx films or by ALD-Al2O3 films after annealing at 425 degrees C. Both passivation schemes provide an excellent thermal stability during firing at 910 degrees C with SRVs below 12 cm/s for both, Al2O3/SiNy stacks and single Al2O3 layers. A fixed negative charge of -4x10(12) cm(-2) is measured for ICP-AlOx and ALD-Al2O3, whereas the interface state density is higher for the ICP-AlOx layer with values of 11.0x10(11) eV(-1)cm(-2) compared to 1.3x10(11) eV(-1)cm(-2) for ALD-Al2O3. Implemented into large-area screen-printed PERC solar cells, an independently confirmed efficiency of 20.1% for ICP-AlOx and an efficiency of 19.6% for ALD-Al2O3 are achieved. (C) 2012 Published by Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the SiliconPV 2012 conference.

引用

页码：379 / 384

页数：6

共 10 条

[1] Very low surface recombination velocities on p-type silicon wafers passivated with a dielectric with fixed negative charge [J].

Agostinelli, G. ;

Delabie, A. ;

Vitanov, P. ;

Alexieva, Z. ;

Dekkers, H. F. W. ;

De Wolf, S. ;

Beaucarne, G. .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2006, 90 (18-19) :3438-3443

[2] Fixed charge density in silicon nitride films on crystalline silicon surfaces under illumination [J].

Dauwe, S ;

Schmidt, J ;

Metz, A ;

Hezel, R .

CONFERENCE RECORD OF THE TWENTY-NINTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE 2002, 2002, :162-165

[3] Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition [J].

Dingemans, G. ;

Seguin, R. ;

Engelhart, P. ;

van de Sanden, M. C. M. ;

Kessels, W. M. M. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2010, 4 (1-2) :10-12

[4] Towards 20% efficient large-area screen-printed rear-passivated silicon solar cells [J].

Dullweber, Thorsten ;

Gatz, Sebastian ;

Hannebauer, Helge ;

Falcon, Tom ;

Hesse, Rene ;

Schmidt, Jan ;

Brendel, Rolf .

PROGRESS IN PHOTOVOLTAICS, 2012, 20 (06) :630-638

[5] Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor [J].

Heil, S. B. S. ;

van Hemmen, J. L. ;

Hodson, C. J. ;

Singh, N. ;

Klootwijk, J. H. ;

Roozeboom, F. ;

de Sanden, M. C. M. van ;

Kessels, W. M. M. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2007, 25 (05) :1357-1366

[6] Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 [J].

Hoex, B. ;

Heil, S. B. S. ;

Langereis, E. ;

van de Sanden, M. C. M. ;

Kessels, W. M. M. .

APPLIED PHYSICS LETTERS, 2006, 89 (04)

[7]

Kane D., 1985, IEEE photovoltaic specialists conference 18, V69, P578

[8] General parameterization of Auger recombination in crystalline silicon [J].

Kerr, MJ ;

Cuevas, A .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (04) :2473-2480

[9] Effective surface passivation of crystalline silicon using ultrathin Al2O3 films and Al2O3/SiNx stacks [J].

Schmidt, Jan ;

Veith, Boris ;

Brendel, Rolf .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2009, 3 (09) :287-289

[10] Contact passivation in silicon solar cells using atomic-layer-deposited aluminum oxide layers [J].

Zielke, Dimitri ;

Petermann, Jan Hendrik ;

Werner, Florian ;

Veith, Boris ;

Brendel, Rolf ;

Schmidt, Jan .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2011, 5 (08) :298-300

← 1 →