Fabrication of p-n junction diodes from phthalocyanine and electropolymerized perylene derivatives

被引：0
|
作者：
Kudo, T [1 ]
Kimura, M [1 ]
Hanabusa, K [1 ]
Shirai, H [1 ]
机构：
[1] Shinshu Univ, Fac Text Sci & Technol, Dept Funct Polymer Sci, Ueda, Nagano 386, Japan
来源：
JOURNAL OF PORPHYRINS AND PHTHALOCYANINES | 1998年 / 2卷 / 03期
关键词：
N,N '-4-hydroxyphenyl-3,4,9,10-perylenetetracarboxylic-diimide electrodeposition; phthalocyanine; p-n junction diode; Zener-type breakdown; photocurrent enhancement;
D O I：
10.1002/(SICI)1099-1409(199805/06)2:3<231::AID-JPP82>3.3.CO;2-J
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Perylene derivative films doped with metal ion were deposited on indium tin oxide (ITO)-coated glass electrodes by electrodeposition from solutions of N,N'-4-hydroxyphenyl-3,4,9,10-perylenetetracarboxylic-diimide (hph-PTC) and CaCl2, PbCl2, ZnCl2 or CoBr2 as a supporting electrolyte in N,N-dimethylformamide (DME). The pn junction diodes consisting of a p-type phthalocyanine (Pc) sublimed film and an n-type hph-PTC electrodeposited film doped with metal ion exhibited Zener-type breakdown and photocurrent enhancement. The device with a p-n junction consisting of a Pc sublimed film and an hph-PTC electrodeposited film doped with Ca2+ showed the largest amplification of photocurrent. This result suggests that the dopant ion in hph-PTC is an important factor in the preparation of p-n junction diodes. (C) 1998 John Wiley & Sons, Ltd.
引用
收藏
页码：231 / 235
页数：5
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